Nanopatterned aluminum nitride template for high efficiency light-emitting diodes.

Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire

Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nanopatterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15 nm low-temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of ...

Degradation mechanism beyond device self-heating in high power light-emitting diodes

Related Articles Temperature-dependence of the internal efficiency droop in GaN-based diodes Appl. Phys. Lett. 99, 181127 (2011) Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes Appl. Phys. Lett. 99, 181116 (2011) Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electronblocking layer J. Ap...

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping

The development and application of nitride-based light-emitting diodes (LEDs) is handicapped by the low hole conductivity of Mg-doped layers. Mg-doping becomes increasingly difficult with higher Al-content of the p-AlGaN layers as required for ultraviolet (UV) light emission. Polarization-induced hole doping of graded AlGaN was recently demonstrated as an alternative doping method. Using advanc...

Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes.

A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating the SWCNTs as an intermediate layer for stress and defect mitigation. SWCNTs maintained their integrity at high reaction temperature and led to suppression of edge dislocations and bi...